Doping掺杂
Doping is the controlled introduction of impurity atoms, such as boron, phosphorus, or arsenic, into a semiconductor lattice to modify its electrical conductivity, carrier concentration, and transistor behavior. In semiconductor documentation, doping appears in front-end process flows, ion implantation and diffusion recipes, device engineering specifications, and parametric test records where n-type and p-type wells, source/drain regions, and channel implants are defined.
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Where this term appears
Translators encounter doping in ion implantation equipment manuals, process integration documents, technology qualification reports, and device datasheets. It appears in phrases such as doping profile, dopant activation, implant dose, and annealing conditions. Accurate terminology is important because localizing recipe parameters or safety data sheets requires distinguishing implant, diffusion, and activation steps.
Translation checks
A frequent mistake is translating doping as 'adding impurities' in a way that suggests contamination rather than deliberate process control. Confusing implant dose with concentration, or using one term for both n-type and p-type without marking polarity, can shift key engineering meaning because the dopant species and activation conditions differ.
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