Ion Implantation离子注入
Ion implantation is a doping process that accelerates ionized dopant atoms into a semiconductor wafer to modify the electrical properties of selected regions. In wafer-fab documentation, it appears in frontend process specifications, implanter equipment manuals, and recipe management systems, where species, dose, energy, and tilt angle define the implant step, its effect on device performance, and the required safety controls.
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Where this term appears
Translators encounter ion implantation in implant process recipes, equipment user interfaces, and maintenance documentation for ion implanters. It also appears in fab training materials and safety content, where dose units, beam current, and species names must be rendered correctly to avoid setup or safety errors. These files are frequently translated for wafer-fab software rollouts.
Translation checks
A frequent error is to translate ion implantation as “ion injection” or to describe it as a deposition or coating step. This obscures the doping role of the process and can lead to wrong recipe interpretation, because implantation changes the substrate conductivity rather than simply adding a layer on top. Implant recipes and maintenance instructions are particularly sensitive to this error.
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