High-K Dielectric高介电常数介质
A high-k dielectric is a gate insulator material with a higher dielectric constant than silicon dioxide, allowing a physically thicker layer to provide the same capacitance while reducing leakage current. It appears in front-end process documentation, transistor integration specifications, and reliability reports where gate stack materials are described; the term is often paired with metal gate and equivalent oxide thickness.
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Where this term appears
In localization, high-k dielectric appears in front-end process specifications, materials documentation, and equipment manuals for atomic layer deposition or thermal treatment tools. It also appears in reliability reports, failure-analysis texts, and technology node announcements where gate stack changes are described for process engineers. The term is often paired with metal gate and equivalent oxide thickness.
Translation checks
A frequent mistake is translating high-k as 'high-K' or treating k as an abbreviation for 'constant' instead of dielectric constant, which can produce awkward strings like '高K介质' without explanation. Another error is describing the material as merely 'insulating layer,' which loses the comparison to SiO₂ and the reason for leakage reduction in scaled transistors.
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