Atomic layer deposition (ALD) is a thin-film growth technique that deposits materials one atomic layer at a time by pulsing precursors alternately and relying on self-limiting surface reactions. In advanced semiconductor process documentation, ALD is used for highly conformal films—especially gate dielectrics, liner layers, and high-aspect-ratio structures—where sub-nanometer thickness control and uniformity are critical.
ALD appears in process integration documents, ALD equipment manuals, and materials qualification reports. Translators handle precursor pulse and purge step labels, cycle count fields, chamber temperature settings, and film thickness tables, often in sections that compare ALD with CVD and PVD. Precise layer-count and pulse-purge terminology directly affects recipe readability.
A common mistranslation is rendering ALD as '原子沉积' and dropping 'layer', which hides the layer-by-layer mechanism. Another error is using '原子级沉积' without explaining that each cycle deposits a single atomic layer, making it sound like any nanoscale deposition. This weakens the distinction from CVD and confuses process control discussions.
Terminology must stay consistent across datasheets, design kits and patent filings. A single inconsistent parameter can propagate into fabrication decisions or weaken a patent claim, and IP confidentiality applies to every document in the chain.
Angel Translation locks terms like this into a project terminology base before expert review begins, so the same source term resolves to the same target term across every document in a submission — and stays consistent in the next revision. See the 8-step AI + expert workflow.
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