Chemical Vapor Deposition化学气相沉积
Chemical vapor deposition (CVD) is a fabrication process that uses gaseous reactants introduced into a reaction chamber to form a solid film on a heated wafer through chemical reactions and by-product removal. In semiconductor manufacturing documentation, it is specified for depositing dielectric layers, passivation films, polysilicon, and other materials, and appears in process integration steps, film thickness targets, and equipment recipes.
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Where this term appears
Translators encounter CVD in process specification documents, equipment manuals, and training material for wafer fabrication. It appears in step sequences, gas precursor names, chamber condition settings, and film property tables, often alongside PVD and ALD comparisons. These strings show up in translated fab recipes and process integration checklists where film type must be unambiguous.
Translation checks
A common error is translating 'deposition' as '沉淀' or '镀膜' without distinguishing CVD from electroplating or PVD. Another is confusing 'vapor' with 'steam' in Chinese, implying water vapor. This matters because CVD documentation describes specific gas chemistries and equipment controls, and the wrong process term can lead to recipe or safety misunderstandings.
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Read the published project →Published scope shows related industry experience; it does not confirm that this specific term was used or reviewed in the project.
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