Physical Vapor Deposition物理气相沉积
Physical vapor deposition (PVD) is a vacuum-based deposition technique in which a solid source material is vaporized by sputtering, evaporation, or ion bombardment and then condenses as a thin film on the wafer surface. In semiconductor manufacturing documentation, PVD is commonly specified for metallic layers such as barrier films, seed layers, and interconnect conductors, and is characterized by film thickness, step coverage, and uniformity requirements.
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Where this term appears
PVD appears in fab process flow documents, equipment specifications, and materials science training. Translators see it in deposition recipe values, target material names, sputter chamber descriptions, and comparisons with CVD and ALD in process integration sections. Clear distinctions between PVD, CVD, and ALD are essential in equipment user interfaces as well as in safety and maintenance notes.
Translation checks
A common mistake is to translate PVD as '物理蒸镀' and use '蒸镀' for both evaporation and sputtering, losing process distinctions. Another is describing it as '物理镀膜' in equipment UI without noting vacuum deposition. This can cause confusion in recipes where sputter vs. evaporation affects film properties and equipment operation.
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Related document experience
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Japanese → ChineseJapanese-to-Chinese documentation for a listed Japanese semiconductor manufacturer.
Read the published project →
SMIC (Semiconductor Manufacturing International)
English ⇄ ChineseCorporate reporting and disclosure documentation, delivered across successive annual cycles.
Read the published project →Published scope shows related industry experience; it does not confirm that this specific term was used or reviewed in the project.
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