Physical vapor deposition (PVD) is a vacuum-based deposition technique in which a solid source material is vaporized by sputtering, evaporation, or ion bombardment and then condenses as a thin film on the wafer surface. In semiconductor manufacturing documentation, PVD is commonly specified for metallic layers such as barrier films, seed layers, and interconnect conductors, and is characterized by film thickness, step coverage, and uniformity requirements.
PVD appears in fab process flow documents, equipment specifications, and materials science training. Translators see it in deposition recipe values, target material names, sputter chamber descriptions, and comparisons with CVD and ALD in process integration sections. Clear distinctions between PVD, CVD, and ALD are essential in equipment user interfaces as well as in safety and maintenance notes.
A common mistake is to translate PVD as '物理蒸镀' and use '蒸镀' for both evaporation and sputtering, losing process distinctions. Another is describing it as '物理镀膜' in equipment UI without noting vacuum deposition. This can cause confusion in recipes where sputter vs. evaporation affects film properties and equipment operation.
Terminology must stay consistent across datasheets, design kits and patent filings. A single inconsistent parameter can propagate into fabrication decisions or weaken a patent claim, and IP confidentiality applies to every document in the chain.
Angel Translation locks terms like this into a project terminology base before expert review begins, so the same source term resolves to the same target term across every document in a submission — and stays consistent in the next revision. See the 8-step AI + expert workflow.
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