English–Chinese reference · Semiconductor

CMP化学机械抛光

CMP, or chemical mechanical planarization, is a process that flattens wafer surfaces by combining chemical slurry with mechanical abrasion. In semiconductor documentation, the term appears in planarization process steps, slurry and pad specifications, CMP tool manuals, and defect inspection reports, where removal rate, uniformity, and endpoint detection are tracked because they affect subsequent lithography and yield and final device performance.

Angel Translation editorial reference · Confirm the rendering against your source and approved project terminology.

TERM REFERENCE · PROJECT CHECK
EnglishCMP
简体中文化学机械抛光
DomainSemiconductor

Check source meaning → confirm the preferred term → record approved variants and references.

Where this term appears

In localization, CMP appears in process flow descriptions, equipment messages, and materials documentation for slurry and pads. It also occurs in defect and yield review documents, where a clear distinction between planarization and ordinary polishing is needed to preserve process meaning and root-cause context, especially in translated quality reports and maintenance alerts. The distinction also matters in root-cause discussions.

Translation checks

A common mistake is to translate CMP as ordinary “polishing” and drop the chemical-planarization meaning. This can misrepresent the process as purely mechanical, causing confusion in slurry handling, endpoint control, and defect investigations where chemical selectivity and surface planarity are key factors. The loss of this nuance affects process control and quality documents.

Keep the term aligned across your files

Technical terms need checking against the source, approved product terminology and related specifications. Keep units, parameter conditions and document versions aligned across the file set.

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A glossary entry is not an official standard or evidence of regulatory acceptance. Confirm current requirements for your project separately.