Epitaxy外延
Epitaxy is the process of growing a crystalline layer on a substrate so that the new layer follows the substrate's crystal orientation and lattice structure with controlled thickness and doping. In semiconductor localization, the term appears in front-end process specifications, wafer engineering documents, epitaxial layer reports, and materials analyses that describe deposition of silicon, silicon germanium, or compound semiconductor layers.
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Where this term appears
In localization, epitaxy appears in wafer fabrication specifications, epitaxial reactor documentation, and materials characterization reports. Translators may process phrases like 'epitaxial layer thickness', 'selective epitaxy', and 'epi defect density' in process control plans and equipment interfaces. The term also occurs in research papers and user guides for front-end process development and optimization.
Translation checks
A common error is translating epitaxy as 'epitaxial growth' everywhere and losing the distinction between the process and the resulting layer. Some texts also render it as 'epitaxial growth' when 'epitaxy' alone is sufficient, creating noun-verb conflicts. Another mistake is using 'coating' or 'plating', which suggests non-crystalline deposition and obscures the requirement for lattice alignment.
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Related document experience
Torex Semiconductor
Japanese → ChineseJapanese-to-Chinese documentation for a listed Japanese semiconductor manufacturer.
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SMIC (Semiconductor Manufacturing International)
English ⇄ ChineseCorporate reporting and disclosure documentation, delivered across successive annual cycles.
Read the published project →Published scope shows related industry experience; it does not confirm that this specific term was used or reviewed in the project.
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