Semiconductor · 半导体

Critical Dimension关键尺寸

Critical dimension (CD) is the smallest feature size or linewidth that a fabrication process must control to achieve the intended electrical performance, typically specified in nanometers and measured after lithography or etch. In semiconductor documentation it appears in process specifications, metrology reports, statistical process-control charts, and design-rule checks where CD uniformity, bias, and target offsets are closely tracked.

Where this term appears

Critical dimension appears in process specifications, metrology recipes, OPC models, and design-rule documents. Translators encounter it when localizing fab measurement instructions, CD-SEM tool user interfaces, statistical process-control reports, and quality records, where CD values, target offsets, and uniformity metrics must remain numerically and terminologically consistent with source images.

The mistake that shows up most often

A common mistake is expanding CD as compact disk or glossing it as critical distance, which is wrong in semiconductor metrology. Another issue is translating the abbreviation inconsistently with the full term, causing confusion in recipes and user interfaces where CD, linewidth, and target offset must correspond exactly to the drawings and data.

Why consistent rendering matters

Terminology must stay consistent across datasheets, design kits and patent filings. A single inconsistent parameter can propagate into fabrication decisions or weaken a patent claim, and IP confidentiality applies to every document in the chain.

Angel Translation locks terms like this into a project terminology base before expert review begins, so the same source term resolves to the same target term across every document in a submission — and stays consistent in the next revision. See the 8-step AI + expert workflow.

EnglishCritical Dimension
简体中文关键尺寸
DomainSemiconductor

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