Optical proximity correction (OPC) is a computational lithography step that modifies photomask geometries—adding serifs, biasing edges, or creating sub-resolution assist features—so that diffraction and resist effects do not distort the printed pattern. In mask data preparation and DFM documentation, OPC sits after design rule checking and before mask writing, and is essential for maintaining critical dimension fidelity in advanced process nodes.
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OPC appears in mask synthesis manuals, DFM rule decks, and lithography process documentation. Translators encounter it in OPC script parameters, mask data prep menus, correction layer descriptions, and signoff reports that discuss critical dimension and overlay budgets. The term often sits alongside photomask, reticle, and lithography settings, and consistent rendering is needed in user interface labels.
A common mistake is translating OPC as '光学接近校正' or '光学邻近修正' inconsistently, or using '修正' for both correction and repair. More importantly, translators sometimes omit 'optical' or render 'proximity' as '近距离', losing the diffraction context. In mask data prep UI, inconsistent terminology can lead to wrong layer or script selection. This is especially costly in tape-out flows.
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Japanese-to-Chinese documentation for a listed Japanese semiconductor manufacturer.
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