Multi-Patterning多重曝光
Multi-patterning is a lithography technique that splits a dense circuit pattern into two or more masks and exposures to achieve features below the resolution limit of a single exposure. In advanced process documentation, it includes double patterning, triple patterning, and self-aligned approaches, and places stricter requirements on decomposition, overlay, and mask data preparation.
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Where this term appears
The term appears in design rule manuals, mask decomposition flow documents, and lithography process guides. Translators handle multi-patterning design constraints, color/layer assignment labels, mask split rules, and overlay error messages in DFM and tape-out documentation. These strings occur in advanced-node design rules and mask preparation checklists, and engineers depend on clear split-layer naming.
Translation checks
A common error is translating multi-patterning as '多图案化' or '多模式' and losing the lithographic exposure meaning. Another mistake is using '多重曝光' for multi-exposure processes that are not used to split a single layer's features, which blurs the distinction between double patterning, double exposure, and other resolution enhancement techniques.
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Related document experience
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