Semiconductor · 半导体

Multi-Patterning多重曝光

Multi-patterning is a lithography technique that splits a dense circuit pattern into two or more masks and exposures to achieve features below the resolution limit of a single exposure. In advanced process documentation, it includes double patterning, triple patterning, and self-aligned approaches, and places stricter requirements on decomposition, overlay, and mask data preparation.

Where this term appears

The term appears in design rule manuals, mask decomposition flow documents, and lithography process guides. Translators handle multi-patterning design constraints, color/layer assignment labels, mask split rules, and overlay error messages in DFM and tape-out documentation. These strings occur in advanced-node design rules and mask preparation checklists, and engineers depend on clear split-layer naming.

The mistake that shows up most often

A common error is translating multi-patterning as '多图案化' or '多模式' and losing the lithographic exposure meaning. Another mistake is using '多重曝光' for multi-exposure processes that are not used to split a single layer's features, which blurs the distinction between double patterning, double exposure, and other resolution enhancement techniques.

Why consistent rendering matters

Terminology must stay consistent across datasheets, design kits and patent filings. A single inconsistent parameter can propagate into fabrication decisions or weaken a patent claim, and IP confidentiality applies to every document in the chain.

Angel Translation locks terms like this into a project terminology base before expert review begins, so the same source term resolves to the same target term across every document in a submission — and stays consistent in the next revision. See the 8-step AI + expert workflow.

EnglishMulti-Patterning
简体中文多重曝光
DomainSemiconductor

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