Latch-up is a failure mechanism in CMOS circuits in which parasitic bipolar transistors create a low-impedance path between supply rails, causing excessive current flow that can damage the device or its package. In reliability and design guideline documents, the term appears in testing specifications, layout rules, guard-ring recommendations, and failure analysis reports that address immunity to voltage or current stress and prevent destructive overcurrent.
In localization projects, latch-up appears in ESD and latch-up test reports, reliability qualification documents, design rule manuals, I/O cell documentation, and automotive or industrial component specifications. It also occurs in failure analysis reports and application notes that describe overvoltage events, current injection, or layout practices for avoiding unwanted parasitic paths.
A frequent error is translating latch-up as “锁存” or “闭锁” and mixing it with the digital latch storage function. Since latch-up is a destructive parasitic condition, a literal or generic translation in test reports can suggest a normal logic state, reducing the urgency of a reliability failure or masking the need for layout redesign.
Terminology must stay consistent across datasheets, design kits and patent filings. A single inconsistent parameter can propagate into fabrication decisions or weaken a patent claim, and IP confidentiality applies to every document in the chain.
Angel Translation locks terms like this into a project terminology base before expert review begins, so the same source term resolves to the same target term across every document in a submission — and stays consistent in the next revision. See the 8-step AI + expert workflow.
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